Structures by: Atake T.

Total: 6

Β silicon nitride

N4Si3

du Boulay, D.Ishizawa, N.Atake, T.Streltsov, V.Furuya, K.Munakata, F.

Acta Crystallographica Section B (2004) 60, 4 388-405

a=7.60440(10)Å   b=7.60440(10)Å   c=2.90630(10)Å

α=90.00000°   β=90.00000°   γ=120.0000°

Β silicon nitride

N4Si3

du Boulay, D.Ishizawa, N.Atake, T.Streltsov, V.Furuya, K.Munakata, F.

Acta Crystallographica Section B (2004) 60, 4 388-405

a=7.6015(3)Å   b=7.6015(3)Å   c=2.90610(10)Å

α=90.00000°   β=90.00000°   γ=120.0000°

Β silicon nitride

N4Si3

du Boulay, D.Ishizawa, N.Atake, T.Streltsov, V.Furuya, K.Munakata, F.

Acta Crystallographica Section B (2004) 60, 4 388-405

a=7.60440(10)Å   b=7.60440(10)Å   c=2.90630(10)Å

α=90.00000°   β=90.00000°   γ=120.0000°

Β silicon nitride

N4Si3

du Boulay, D.Ishizawa, N.Atake, T.Streltsov, V.Furuya, K.Munakata, F.

Acta Crystallographica Section B (2004) 60, 4 388-405

a=7.6015(3)Å   b=7.6015(3)Å   c=2.90610(10)Å

α=90.00000°   β=90.00000°   γ=120.0000°

Β silicon nitride

N4Si3

du Boulay, D.Ishizawa, N.Atake, T.Streltsov, V.Furuya, K.Munakata, F.

Acta Crystallographica Section B (2004) 60, 4 388-405

a=7.6020(2)Å   b=7.6020(2)Å   c=2.90600(10)Å

α=90.00000°   β=90.00000°   γ=120.0000°

Β silicon nitride

N4Si3

du Boulay, D.Ishizawa, N.Atake, T.Streltsov, V.Furuya, K.Munakata, F.

Acta Crystallographica Section B (2004) 60, 4 388-405

a=7.6020(2)Å   b=7.6020(2)Å   c=2.90600(10)Å

α=90.00000°   β=90.00000°   γ=120.0000°